半导体CMP工艺介绍.

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1、Click to edit Master title style,Click to edit Master text styles,Second level,Third level,Fourth level,Fifth level,*,Introduction of CMP,化学机械抛光制程简介,Chemical Mechanical Polishing-CMP),名目,CMP的进展史,CMP简介,为什么要有CMP制程,CMP的应用,CMP的耗材,CMP Mirra-Mesa 机台简况,Introduction of CMP,CMP 进展史,1983:CMP制程由IBM制造。,1986:氧化硅

2、CMP Oxide-CMP开头试行。,1988:金属钨CMPW CMP试行。,1992:CMP 开头消失在 SIA Roadmap。,1994:台湾的半导体生产厂第一次开头将化学机械研磨应用于生产中。,1998:IBM 首次使用铜制程CMP。,Introduction of CMP,CMP,制程的全貌简介,Introduction of CMP,CMP 机台的根本构造(I),压力,pressure,平台,Platform,研磨垫,Pad,芯片,Wafer,研磨液,Slurry,Wafer carrier,终点探测,Endpoint,Detection,钻石整理器,Diamond Conditi

3、oner,Introduction of CMP,CMP 机台的根本构造(II),Introduction of CMP,Mirra,机台概貌,Silicon wafer,Diamond disk,Introduction of CMP,Teres,机台概貌,Introduction of CMP,线性平坦化技术,Introduction of CMP,Introduction of CMP,Teres 研磨均匀性(Non-uniformity)的气流掌握法,研磨皮带上的气孔设计(,Air-belt design),Introduction of CMP,F-Rex200,机台概貌,Intro

4、duction of CMP,终点探测图 STI CMP endpoint profile,光学,摩擦电流,为什么要做化学机械抛光,Why CMP?,Introduction of CMP,没有平坦化之前芯片的外表形态,Introduction of CMP,Isolation,0.4,um,0.5,um,IMD,M2,M2,M1,M1,1.2,um,0.7,um,0.3,um,1.0,um,2.2,um,没有平坦化状况下的PHOTO,Introduction of CMP,各种不同的平坦化状况,Introduction of CMP,没有平坦化之前,平滑化,局部平坦化,全面平坦化,平坦化程度

5、比较,CMP,Resist Etch Back,BPSG Reflow,SOG,SACVD,Dep/Etch,HDP,ECR,0.1,1,10,100,1000,10000,(,Gap fill),Local,Global,平坦化 范围(微米),Introduction of CMP,Step Height凹凸落差&Local Planarity局部平坦化过程,凹凸落差越来越小,H0=,step height,局部平坦化：凹凸落差消逝,Introduction of CMP,初始形貌对平坦化的影响,A,B,C,A,C,B,RR,Time,Introduction of CMP,CMP,制程的应

6、用,CMP,制程的应用,前段制程中的应用,Shallow trench isolation,(,STI-CMP),后段制程中的应用,Pre-meal dielectric planarization(ILD-CMP),Inter-metal dielectric planarization(IMD-CMP),Contact/Via formation(W-CMP),Dual Damascene(Cu-CMP),另外还有,Poly-CMP,RGPO-CMP,等。,Introduction of CMP,STI&Oxide CMP,什么是,STI CMP?,所谓STIShallow Trench

7、Isolation，即浅沟槽隔离技术，它的作用是用氧化层来隔开各个门电路GATE，使各门电路之间互不导通。STI CMP主要就是将wafer外表的氧化层磨平，最终停在SIN上面。,STI CMP的前一站是CVD区，后一站是WET区。,STI,STI,Oxide,SIN,STI,STI,SIN,CMP,前,CMP,后,所谓Oxide CMP包括ILD(Inter-level Dielectric)CMP和IMD(Inter-metal Dielectric)CMP,它主要是磨氧化硅(Oxide),将Oxide磨到肯定的厚度，从而到达平坦化。,Oxide CMP 的前一站是长Oxide的CVD区，

8、后一站是Photo区。,什么是,Oxide CMP?,CMP,前,CMP,后,STI&Oxide CMP,W钨 CMP流程-1,Ti/TiN PVD,WCMP,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W CVD,Ti/TiN,N-Well,P-Well,P+,P+,N+,N+,W,W CVD,功能：Glue粘合 and barrier 阻隔layer。以便W得以叠长。,功能：长,W,膜 以便导电用。,POLY CMP,流程,简介,-2,a,FOX,FOX,Cell,P2,P2,P2,FOX,FOX,Cell,P2,P2,P2,FOX,POLY DEPO,POLY CM

9、P+OVER POLISH,功能：长,POLY,膜以填之。,功能：刨平POLY 膜。END POINT终点探测界限+OVER POLISH多出研磨残留的POLY膜。,ROUGH POLY CMP,流程-2,b,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,CELL ARRAY CROSS SECTION,FOX,FOX,Cell,P2,P2,P2,PR COATING,功能：PR 填入糟沟以爱护糟沟内的ROUGH POLY。,ROUGH POLY CMP,功能：刨平PR和ROUGH POLY 膜。END POINT终点探测界限+OVER POLI

10、SH多出研磨残留的ROUGH POLY膜。,CMP,耗材,Introduction of CMP,CMP,耗材的种类,研磨液slurry,研磨时添加的液体状物体，颗粒大小跟研磨后的刮伤等缺陷有关。,研磨垫pad,研磨时垫在晶片下面的片状物。它的使用寿命会影响研磨速率等。,研磨垫整理器condition disk,钻石盘状物，整理研磨垫。,Introduction of CMP,CMP,耗材的影响,随着CMP耗材consumable使用寿命life time的增加，CMP的研磨速率removal rate，研磨均匀度Nu%等参数都会发生变化。故要求定时做机台的MONITOR。,ROUTINE M

11、ONITOR 是用来查看机台和制程的数字是否稳定，是否在管制的范围之内的一种方法。,Introduction of CMP,CMP Mirra-Mesa,机台简况,Introduction of CMP,FABS,MIRRA,MESA,Mirra-Mesa,机台外观-侧面,SMIF POD,WET ROBOT,Introduction of CMP,Mirra,(,Mesa),Top view,Mirra-Mesa,机台外观-,俯视图,Introduction of CMP,Mirra-Mesa,机台-运作过程简称,1,2,3,4,5,6,12:FABS 的机器手从cassette 中拿出未加

12、工的WAFER并送到WAFER的暂放台。,23:Mirra 的机器手接着把WAFER从暂放台运送到LOADCUP。LOADCUP 是WAFER 上载与卸载的地方。,34:HEAD 将WAFER拿住。CROSS 旋转把HEAD转到PLATEN 1到2到3如此这般挨次般研磨。,43:研磨完毕后，WAFER 将在LOADCUP御载。,35:Mirra 的机器手接着把WAFER从LOADCUP 中拿出并送到MESA清洗。,56:MESA清洗局部有1氨水NH4OH+MEGASONIC超声波糟 2氨水NH4OH刷。3氢氟酸水HF)刷 4SRD，旋转，烘干部。,61:最终，FABS 机器手把清洗完的WAFER 送回原本的CASSETTE。加工就这样完毕了。,HEAD,End,