半导体工艺学silvaco仿真实例——扩散
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1、Indium Implant and Anneal 1 go athena 2 3 #TITLE: Indium Anneal 4 5 #the x dimension definition 6 line x loc = 0.0 spacing=0.1 7 line x loc = 0.1 spacing=0.1 8 9 #the vertical definition 10 line y loc = 0 spacing = 0.02 11 line y loc = 2.0 spacing = 0.20 12 13 #initialize the mesh 14
2、 init silicon c.phos=1.0e14 15 16 #perform uniform boron implant 17 implant indium dose=1e13 energy=70 monte 18 structure outfile=andfex12_0.str 19 20 #perform diffusion 21 diffuse time=30 temperature=1000 22 23 24 extract name="xj" xj silicon mat.occno=1 x.val=0.0 junc.occno=1 25 26 #sa
3、ve the structure 27 structure outfile=andfex12_1.str 28 29 tonyplot -overlay andfex12_0.str andfex12_1.str -set andfex12.set 30 31 quit Oxidation Enhanced Diffusion of Boron 1 go athena 2 3 # OED of Boron 4 5 #the x dimension definition 6 line x loc = 0.0 spacing=0.1 7 line x loc
4、= 0.1 spacing=0.1 8 9 #the vertical definition 10 line y loc = 0 spacing = 0.02 11 line y loc = 2.0 spacing = 0.20 12 line y loc = 25.0 spacing = 2.5 13 14 #initialize the mesh 15 init silicon c.boron=1.0e14 16 17 #perform uniform boron implant 18 implant boron dose=1e13 energy=70 19 20
5、 #set diffusion model for OED 21 method two.dim 22 23 #perform diffusion 24 diffuse time=30 temperature=1000 dryo2 25 # 26 extract name="xj_two.dim" xj silicon mat.occno=1 x.val=0.0 junc.occno=1 27 28 #save the structure 29 structure outfile=andfex02_0.str 30 31 # repeat the simulation wi
6、th default FERMI model 32 go athena 33 34 #TITLE: Simple Boron Anneal 35 36 #the x dimension definition 37 line x loc = 0.0 spacing=0.1 38 line x loc = 0.1 spacing=0.1 39 40 #the vertical definition 41 line y loc = 0 spacing = 0.02 42 line y loc = 2.0 spacing = 0.20 43 line y loc = 25.0
7、spacing = 2.5 44 45 #initialize the mesh 46 init silicon c.phos=1.0e14 47 48 #perform uniform boron implant 49 implant boron dose=1e13 energy=70 50 51 #select diffusion model 52 method fermi 53 54 #perform diffusion 55 diffuse time=30 temperature=1000 dryo2 56 # 57 extract name="xj_fer
8、mi" xj silicon mat.occno=1 x.val=0.0 junc.occno=1 58 59 60 #save the structure 61 structure outfile=andfex02_1.str 62 63 # compare diffusion models 64 tonyplot -overlay andfex02_0.str andfex02_1.str -set andfex02.set Emitter Push Effect 1 go athena 2 3 #TITLE: Emitter push effec
9、t example 4 # 5 line x loc=0.0 spac=0.2 6 line x loc=2.5 spac=0.8 7 line x loc=3.0 spac=0.2 8 # 9 line y loc=0.00 spac=0.04 10 line y loc=0.3 spac=0.06 11 line y loc=2.0 spac=0.8 12 line y loc=10.0 spac=2.0 13 # 14 init c.phos=1e15 15 # 16 implant boron dose=1e13 energy=40 17 # 18 dep
10、osit nitride thick=.2 div=4 19 # 20 etch right nitride p1.x=2.5 21 relax y.min=1.5 22 # 23 implant phosphor dose=1e16 energy=30 24 # 25 etch nitride all 26 # 27 method compress full.cpl 28 diffuse time=30 temp=1000 29 # 30 structure outfile=andfex07.str 31 # 32 tonyplot -st andfex07.st
11、r -set andfex07.set 33 34 quit Damage Enhanced Diffusion of Arsenic This example demonstrates the damage enhanced diffusion effect in a heavy arsenic implant typical of MOS source/drain or bipolar emitter processing. 1 go athena 2 3 #the x dimension definition 4 line x loc = 0.0 spacing
12、=0.1 5 line x loc = 0.1 spacing=0.1 6 7 #the vertical definition 8 line y loc = 0 spacing = 0.005 9 line y loc = 2.0 spacing = 0.20 10 line y loc = 25.0 spacing = 2.5 11 12 #initialize the mesh 13 init silicon c.boron=1.0e17 14 15 #deposit screen oxide 16 deposit oxide thickness=0.005 di
13、v=2 17 18 #perform arsenic implant with damage 19 implant arsenic dose=1.0e15 energy=40 tilt=7 unit.damage dam.factor=0.1 20 21 #set diffusion model for TED 22 method full.cpl 23 24 #perform diffusion 25 diffuse time=15/60 temperature=1000 26 # 27 extract name="xj_fullcpl" xj silicon mat.
14、occno=1 x.val=0.0 junc.occno=1 28 29 #save the structure 30 structure outfile=andfex03_0.str 31 32 # repeat the simulation with FERMI model 33 34 #the x dimension definition 35 line x loc = 0.0 spacing=0.1 36 line x loc = 0.1 spacing=0.1 37 38 #the vertical definition 39 line y loc = 0 s
15、pacing = 0.005 40 line y loc = 2.0 spacing = 0.20 41 line y loc = 25.0 spacing = 2.5 42 43 #initialize the mesh 44 init silicon c.boron=1.0e17 45 46 #deposit screen oxide 47 deposit oxide thickness=0.005 div=2 48 49 #perform arsenic implant with damage 50 implant arsenic dose=1.0e15 energ
16、y=40 tilt=7 unit.damage dam.factor=0.1 51 52 #set default model 53 method fermi 54 55 #perform diffusion 56 diffuse time=15/60 temperature=1000 57 # 58 extract name="xj_fermi" xj silicon mat.occno=1 x.val=0.0 junc.occno=1 59 60 #save the structure 61 structure outfile=andfex03_1.str 62 63 # compare diffusion models 64 tonyplot -overlay andfex03_0.str andfex03_1.str -set andfex03.set
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